GaN FETs GaN HEMT Die DC-6.0GHz, 30 Watt
Products specifications
Id - Continuous Drain Current | 3 A |
Maximum Drain Gate Voltage | - |
Gain | 15 dB |
Maximum Operating Temperature | - |
Output Power | 30 W |
Technology | GaN |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - |
Transistor Type | HEMT |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Product Type | RF JFET Transistors |
Packaging | Waffle |
Pd - Power Dissipation | - |
Vds - Drain-Source Breakdown Voltage | 120 V |