GaN FETs GaN HEMT Die DC-6.0GHz, 15 Watt
Lead Time: 182 Days
Products specifications
Technology | GaN |
Output Power | 15 W |
Product Type | RF JFET Transistors |
Maximum Operating Temperature | - |
Minimum Operating Temperature | - |
Vds - Drain-Source Breakdown Voltage | 120 V |
Transistor Type | HEMT |
Transistor Polarity | N-Channel |
Gain | 15 dB |
Id - Continuous Drain Current | 1.5 A |
Packaging | Waffle |
Pd - Power Dissipation | - |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Maximum Drain Gate Voltage | - |