RF JFET Transistors GaN HEMT 4.5-6.0GHz, 25 Watt
Lead Time: 0 Days
Products specifications
Packaging | Tray |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 120 V |
Transistor Type | HEMT |
Product Type | RF JFET Transistors |
Maximum Operating Temperature | + 150 C |
Mounting Style | Screw Mount |
Technology | GaN |
Output Power | 25 W |
Id - Continuous Drain Current | 3 A |
Gain | 12 dB |
Maximum Drain Gate Voltage | - |
Pd - Power Dissipation | - |
Minimum Operating Temperature | - 40 C |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |