GaN FETs GaN HEMT 4.5-6.0GHz, 10 Watt
Lead Time: 51 Days
Products specifications
Transistor Polarity | N-Channel |
Product Type | RF JFET Transistors |
Mounting Style | Screw Mount |
Transistor Type | HEMT |
Id - Continuous Drain Current | 1.5 A |
Pd - Power Dissipation | - |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Minimum Operating Temperature | - 40 C |
Gain | 12 dB |
Vds - Drain-Source Breakdown Voltage | 120 V |
Technology | GaN |
Packaging | Tray |
Output Power | 10 W |
Maximum Drain Gate Voltage | - |
Maximum Operating Temperature | + 150 C |