CGH40180PP

GaN FETs GaN HEMT DC-2.5GHz, 180 Watt
Lead Time: 25 Days

SKU: CGH40180PP

Availability: 69 in stock

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GaN FETs GaN HEMT DC-2.5GHz, 180 Watt
Lead Time: 25 Days

Products specifications

Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Gain	19 dB
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Id - Continuous Drain Current	24 A
Output Power	220 W
Pd - Power Dissipation	-
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	120 V
Maximum Drain Gate Voltage	-
Technology	GaN
Mounting Style	Screw Mount

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Products specifications

Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Gain	19 dB
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Id - Continuous Drain Current	24 A
Output Power	220 W
Pd - Power Dissipation	-
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	120 V
Maximum Drain Gate Voltage	-
Technology	GaN
Mounting Style	Screw Mount