CGH40120F

GaN FETs GaN HEMT DC-2.5GHz, 120 Watt
Lead Time: 58 Days

SKU: CGH40120F

Availability: 151 in stock

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GaN FETs GaN HEMT DC-2.5GHz, 120 Watt
Lead Time: 58 Days

Products specifications

Transistor Polarity	N-Channel
Id - Continuous Drain Current	12 A
Transistor Type	HEMT
Technology	GaN
Mounting Style	Screw Mount
Product Type	RF JFET Transistors
Output Power	120 W
Minimum Operating Temperature	- 40 C
Pd - Power Dissipation	-
Gain	19 dB
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	120 V
Maximum Drain Gate Voltage	-
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V

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Products specifications

Transistor Polarity	N-Channel
Id - Continuous Drain Current	12 A
Transistor Type	HEMT
Technology	GaN
Mounting Style	Screw Mount
Product Type	RF JFET Transistors
Output Power	120 W
Minimum Operating Temperature	- 40 C
Pd - Power Dissipation	-
Gain	19 dB
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	120 V
Maximum Drain Gate Voltage	-
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V