CGH40090PP

GaN FETs GaN HEMT DC-2.5GHz, 90 Watt

SKU: CGH40090PP

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Quantity

100+

Price

R 10,270.88

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GaN FETs GaN HEMT DC-2.5GHz, 90 Watt

Products specifications

Output Power	100 W
Mounting Style	Screw Mount
Vds - Drain-Source Breakdown Voltage	120 V
Product Type	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Technology	GaN
Transistor Type	HEMT
Id - Continuous Drain Current	12 A
Gain	12.5 dB
Packaging	Tube
Pd - Power Dissipation	-
Minimum Operating Temperature	- 40 C
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Maximum Drain Gate Voltage	-

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Products specifications

Output Power	100 W
Mounting Style	Screw Mount
Vds - Drain-Source Breakdown Voltage	120 V
Product Type	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Technology	GaN
Transistor Type	HEMT
Id - Continuous Drain Current	12 A
Gain	12.5 dB
Packaging	Tube
Pd - Power Dissipation	-
Minimum Operating Temperature	- 40 C
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Maximum Drain Gate Voltage	-