GaN FETs GaN HEMT DC-4.0GHz, 45 Watt
Products specifications
Packaging | Tube |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 40 C |
Technology | GaN |
Mounting Style | Screw Mount |
Transistor Polarity | N-Channel |
Output Power | 55 W |
Vds - Drain-Source Breakdown Voltage | 120 V |
Maximum Drain Gate Voltage | - |
Id - Continuous Drain Current | 6 A |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Gain | 14 dB |
Transistor Type | HEMT |
Product Type | RF JFET Transistors |
Pd - Power Dissipation | - |