CGH40035F

GaN FETs GaN HEMT DC-4.0GHz, 35 Watt
Lead Time: 63 Days

SKU: CGH40035F

Availability: 276 in stock

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GaN FETs GaN HEMT DC-4.0GHz, 35 Watt
Lead Time: 63 Days

Products specifications

Technology	GaN
Output Power	45 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Pd - Power Dissipation	-
Transistor Type	HEMT
Mounting Style	Screw Mount
Packaging	Tray
Vds - Drain-Source Breakdown Voltage	120 V
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Id - Continuous Drain Current	4.5 A
Product Type	RF JFET Transistors
Maximum Drain Gate Voltage	-
Transistor Polarity	N-Channel
Gain	15 dB

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Products specifications

Technology	GaN
Output Power	45 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Pd - Power Dissipation	-
Transistor Type	HEMT
Mounting Style	Screw Mount
Packaging	Tray
Vds - Drain-Source Breakdown Voltage	120 V
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Id - Continuous Drain Current	4.5 A
Product Type	RF JFET Transistors
Maximum Drain Gate Voltage	-
Transistor Polarity	N-Channel
Gain	15 dB