GaN FETs GaN HEMT DC-6.0GHz, 25 Watt
Products specifications
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Output Power | 30 W |
Packaging | Tube |
Product Type | RF JFET Transistors |
Technology | GaN |
Pd - Power Dissipation | - |
Id - Continuous Drain Current | 3 A |
Vds - Drain-Source Breakdown Voltage | 120 V |
Maximum Drain Gate Voltage | - |
Minimum Operating Temperature | - 40 C |
Transistor Type | HEMT |
Transistor Polarity | N-Channel |
Mounting Style | Screw Mount |
Gain | 15 dB |