GaN FETs GaN HEMT DC-6.0GHz, 10 Watt
Products specifications
Id - Continuous Drain Current | 1.5 A |
Transistor Type | HEMT |
Transistor Polarity | N-Channel |
Product Type | RF JFET Transistors |
Vds - Drain-Source Breakdown Voltage | 120 V |
Gain | 14.5 dB |
Mounting Style | Screw Mount |
Pd - Power Dissipation | - |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Technology | GaN |
Maximum Drain Gate Voltage | - |
Maximum Operating Temperature | + 150 C |
Output Power | 12.5 W |
Minimum Operating Temperature | - 40 C |
Packaging | Tube |