CGH40006S

GaN FETs GaN HEMT DC-6.0GHz, 6 Watt
Lead Time: 22 Days

SKU: CGH40006S

Availability: 1416 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

200+

Price

R 1,324.86

R 1,052.08

Free shipping

GaN FETs GaN HEMT DC-6.0GHz, 6 Watt
Lead Time: 22 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	120 V
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Technology	GaN
Gain	13 dB
Transistor Type	HEMT
Maximum Drain Gate Voltage	-
Output Power	6.9 W
Id - Continuous Drain Current	0.75 A
Pd - Power Dissipation	-
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Minimum Operating Temperature	- 40 C

Your name *

Your email *

Enquiry *

Products specifications

Vds - Drain-Source Breakdown Voltage	120 V
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Technology	GaN
Gain	13 dB
Transistor Type	HEMT
Maximum Drain Gate Voltage	-
Output Power	6.9 W
Id - Continuous Drain Current	0.75 A
Pd - Power Dissipation	-
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Minimum Operating Temperature	- 40 C