CGH27060F

GaN FETs GaN HEMT VHF-3.0GHz, 60 Watt
Lead Time: 20 Days

SKU: CGH27060F

Availability: 99 in stock

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GaN FETs GaN HEMT VHF-3.0GHz, 60 Watt
Lead Time: 20 Days

Products specifications

Pd - Power Dissipation	56 W
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Technology	GaN
Transistor Polarity	N-Channel
Packaging	Tray
Product Type	RF JFET Transistors
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	14 A
Maximum Operating Temperature	+ 150 C
Gain	14 dB
Vds - Drain-Source Breakdown Voltage	120 V
Mounting Style	Screw Mount
Transistor Type	HEMT
Output Power	60 W

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Products specifications

Pd - Power Dissipation	56 W
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Technology	GaN
Transistor Polarity	N-Channel
Packaging	Tray
Product Type	RF JFET Transistors
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	14 A
Maximum Operating Temperature	+ 150 C
Gain	14 dB
Vds - Drain-Source Breakdown Voltage	120 V
Mounting Style	Screw Mount
Transistor Type	HEMT
Output Power	60 W