CGH27030S

GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
Lead Time: 36 Days

SKU: CGH27030S

Availability: 259 in stock

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R 2,141.31

R 1,723.12

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GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
Lead Time: 36 Days

Products specifications

Output Power	30 W
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	84 V
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Technology	GaN
Maximum Operating Temperature	+ 150 C
Maximum Drain Gate Voltage	28 V
Id - Continuous Drain Current	7 A
Transistor Polarity	N-Channel
Transistor Type	HEMT
Pd - Power Dissipation	21.6 W
Gain	18 dB
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors

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Products specifications

Output Power	30 W
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	84 V
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Technology	GaN
Maximum Operating Temperature	+ 150 C
Maximum Drain Gate Voltage	28 V
Id - Continuous Drain Current	7 A
Transistor Polarity	N-Channel
Transistor Type	HEMT
Pd - Power Dissipation	21.6 W
Gain	18 dB
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors