GaN FETs GaN HEMT VHF-3.0GHz, 30 Watt
Lead Time: 0 Days
Products specifications
Technology | GaN |
Minimum Operating Temperature | - 40 C |
Packaging | Bulk |
Product Type | RF JFET Transistors |
Maximum Operating Temperature | + 150 C |
Output Power | 30 W |
Pd - Power Dissipation | 14 W |
Id - Continuous Drain Current | 7 A |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
Gain | 15 dB |
Maximum Drain Gate Voltage | 28 V |
Transistor Type | HEMT |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 120 V |