CGH27030F

GaN FETs GaN HEMT VHF-3.0GHz, 30 Watt
Lead Time: 38 Days

SKU: CGH27030F

Availability: 85 in stock

Qty:

Free shipping

GaN FETs GaN HEMT VHF-3.0GHz, 30 Watt
Lead Time: 38 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	120 V
Maximum Operating Temperature	+ 150 C
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Id - Continuous Drain Current	7 A
Maximum Drain Gate Voltage	28 V
Output Power	30 W
Pd - Power Dissipation	14 W
Technology	GaN
Mounting Style	Screw Mount
Gain	15 dB
Packaging	Tray
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V

Your name *

Your email *

Enquiry *

Products specifications

Vds - Drain-Source Breakdown Voltage	120 V
Maximum Operating Temperature	+ 150 C
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Id - Continuous Drain Current	7 A
Maximum Drain Gate Voltage	28 V
Output Power	30 W
Pd - Power Dissipation	14 W
Technology	GaN
Mounting Style	Screw Mount
Gain	15 dB
Packaging	Tray
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V