GaN FETs GaN HEMT VHF-3.0GHz, 15 Watt
Lead Time: 62 Days
Products specifications
Technology | GaN |
Transistor Polarity | N-Channel |
Mounting Style | Screw Mount |
Product Type | RF JFET Transistors |
Id - Continuous Drain Current | 3.5 A |
Minimum Operating Temperature | - 40 C |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
Output Power | 15 W |
Gain | 14.5 dB |
Packaging | Tray |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 120 V |
Maximum Drain Gate Voltage | 28 V |
Pd - Power Dissipation | 14 W |
Transistor Type | HEMT |