CGH09120F

GaN FETs GaN HEMT UHF-2.5GHz, 120 Watt
Lead Time: 0 Days

SKU: CGH09120F

Availability: 40 in stock

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GaN FETs GaN HEMT UHF-2.5GHz, 120 Watt
Lead Time: 0 Days

Products specifications

Maximum Drain Gate Voltage	28 V
Product Type	RF JFET Transistors
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	120 V
Mounting Style	Screw Mount
Transistor Polarity	N-Channel
Packaging	Tray
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Pd - Power Dissipation	56 W
Output Power	20 W
Gain	21 dB
Technology	GaN
Id - Continuous Drain Current	28 A

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Products specifications

Maximum Drain Gate Voltage	28 V
Product Type	RF JFET Transistors
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	120 V
Mounting Style	Screw Mount
Transistor Polarity	N-Channel
Packaging	Tray
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Pd - Power Dissipation	56 W
Output Power	20 W
Gain	21 dB
Technology	GaN
Id - Continuous Drain Current	28 A