CG2H80060D-GP4

GaN FETs GaN HEMT Die DC-8.0GHz, 60 Watt
Lead Time: 182 Days

SKU: CG2H80060D-GP4

Availability: 60 in stock

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Quantity

10+

Price

R 3,682.40

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GaN FETs GaN HEMT Die DC-8.0GHz, 60 Watt
Lead Time: 182 Days

Products specifications

Id - Continuous Drain Current	6 A
Pd - Power Dissipation	-
Maximum Drain Gate Voltage	-
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Maximum Operating Temperature	+ 225 C
Packaging	Gel Pack
Technology	GaN
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Polarity	N-Channel
Gain	15 dB
Product Type	RF JFET Transistors
Output Power	60 W
Transistor Type	HEMT

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Products specifications

Id - Continuous Drain Current	6 A
Pd - Power Dissipation	-
Maximum Drain Gate Voltage	-
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Maximum Operating Temperature	+ 225 C
Packaging	Gel Pack
Technology	GaN
Vds - Drain-Source Breakdown Voltage	120 V
Transistor Polarity	N-Channel
Gain	15 dB
Product Type	RF JFET Transistors
Output Power	60 W
Transistor Type	HEMT