GaN FETs GaN HEMT Die DC-8.0GHz, 30 Watt
Lead Time: 182 Days
Products specifications
Technology | GaN |
Packaging | Gel Pack |
Vds - Drain-Source Breakdown Voltage | 120 V |
Transistor Polarity | N-Channel |
Gain | 16.5 dB |
Transistor Type | HEMT |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
Product Type | RF JFET Transistors |
Id - Continuous Drain Current | 3 A |
Minimum Operating Temperature | - |
Output Power | 30 W |
Maximum Operating Temperature | + 225 C |