GaN FETs GaN HEMT Die DC-8.0GHz, 15 Watt
Lead Time: 182 Days
Products specifications
Packaging | Gel Pack |
Gain | 17 dB |
Pd - Power Dissipation | - |
Maximum Drain Gate Voltage | - |
Maximum Operating Temperature | + 225 C |
Technology | GaN |
Vds - Drain-Source Breakdown Voltage | 120 V |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
Output Power | 15 W |
Transistor Type | HEMT |
Transistor Polarity | N-Channel |
Product Type | RF JFET Transistors |
Id - Continuous Drain Current | 1.5 A |