GaN FETs GaN HEMT DC-4.0GHz, 45 Watt
Products specifications
Transistor Type | HEMT |
Transistor Polarity | N-Channel |
Packaging | Tray |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 6 A |
Minimum Operating Temperature | - 40 C |
Maximum Drain Gate Voltage | - |
Product Type | RF JFET Transistors |
Pd - Power Dissipation | - |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
Output Power | 45 W |
Vds - Drain-Source Breakdown Voltage | 120 V |
Gain | 16 dB |
Mounting Style | Screw Mount |
Technology | GaN |