CG2H40025F

GaN FETs GaN HEMT DC-6.0GHz, 25 Watt
Lead Time: 74 Days

SKU: CG2H40025F

Availability: 411 in stock

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GaN FETs GaN HEMT DC-6.0GHz, 25 Watt
Lead Time: 74 Days

Products specifications

Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	3 A
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Transistor Type	HEMT
Maximum Drain Gate Voltage	-
Vds - Drain-Source Breakdown Voltage	120 V
Packaging	Tray
Pd - Power Dissipation	-
Product Type	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Mounting Style	Screw Mount
Output Power	25 W
Technology	GaN
Gain	15 dB

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Products specifications

Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	3 A
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Transistor Type	HEMT
Maximum Drain Gate Voltage	-
Vds - Drain-Source Breakdown Voltage	120 V
Packaging	Tray
Pd - Power Dissipation	-
Product Type	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Mounting Style	Screw Mount
Output Power	25 W
Technology	GaN
Gain	15 dB