SiC MOSFETs ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
Lead Time: 238 Days
Products specifications
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 1.2 kV |
Vgs - Gate-Source Voltage | 25 V, - 5 V |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 80 mOhms |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 3.1 V |
Transistor Polarity | N-Channel |
Technology | SiC |
Channel Mode | Enhancement |
Pd - Power Dissipation | 208 W |
Id - Continuous Drain Current | 31.6 A |
Mounting Style | Through Hole |
Packaging | Tube |
Qg - Gate Charge | 94 nC |