RF Bipolar Transistors Transistor,110W,2.7-2.9GHz,100us,10%
Products specifications
Configuration | Single |
Continuous Collector Current | 8 A |
Maximum Operating Temperature | + 200 C |
Output Power | 110 W |
Technology | Si |
Transistor Type | Bipolar |
Emitter- Base Voltage VEBO | 3 V |
Transistor Polarity | NPN |
Mounting Style | Flange Mount |
Product Type | RF Bipolar Transistors |
Collector- Emitter Voltage VCEO Max | 63 V |