NPTB00004A

GaN FETs DC-6.0GHz 5W Gain 16dB GaN HEMT

SKU: NPTB00004A

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

25+

Price

R 595.38

R 481.20

R 453.74

Free shipping

GaN FETs DC-6.0GHz 5W Gain 16dB GaN HEMT

Products specifications

Packaging	Tray
Gain	16 dB
Id - Continuous Drain Current	1.4 A
Transistor Type	HEMT
Product Type	RF JFET Transistors
Technology	GaN Si
Vds - Drain-Source Breakdown Voltage	100 V
Maximum Operating Temperature	+ 200 C
Transistor Polarity	N-Channel
Pd - Power Dissipation	11.6 W

Your name *

Your email *

Enquiry *

Products specifications

Packaging	Tray
Gain	16 dB
Id - Continuous Drain Current	1.4 A
Transistor Type	HEMT
Product Type	RF JFET Transistors
Technology	GaN Si
Vds - Drain-Source Breakdown Voltage	100 V
Maximum Operating Temperature	+ 200 C
Transistor Polarity	N-Channel
Pd - Power Dissipation	11.6 W