RF Amplifier DC-2.0GHz 100W Gain 20dB GaN HEMT
Lead Time: 16 Days
Products specifications
Vgs - Gate-Source Breakdown Voltage | 3 V |
Transistor Polarity | N-Channel |
Mounting Style | Screw Mount |
Vds - Drain-Source Breakdown Voltage | 160 V |
Transistor Type | HEMT |
Packaging | Tray |
Gain | 21 dB |
Minimum Operating Temperature | - 40 C |
Product Type | RF JFET Transistors |
Technology | GaN Si |
Maximum Operating Temperature | + 85 C |
Id - Continuous Drain Current | 24 mA |
Output Power | 100 W |