NPT2021

GaN FETs DC-2.5GHz 45W Gain 16.5dB GaN HEMT
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SKU: NPT2021

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GaN FETs DC-2.5GHz 45W Gain 16.5dB GaN HEMT
Lead Time: 0 Days

Products specifications

Technology	GaN Si
Packaging	Tray
Gain	14.2 dB
Transistor Type	HEMT
Maximum Operating Temperature	+ 85 C
Id - Continuous Drain Current	14 mA
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	160 V
Minimum Operating Temperature	- 40 C
Mounting Style	Screw Mount
Output Power	45 W
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	3 V

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Products specifications

Technology	GaN Si
Packaging	Tray
Gain	14.2 dB
Transistor Type	HEMT
Maximum Operating Temperature	+ 85 C
Id - Continuous Drain Current	14 mA
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	160 V
Minimum Operating Temperature	- 40 C
Mounting Style	Screw Mount
Output Power	45 W
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	3 V