NPT1012B

GaN FETs DC-4.0GHz P1dB 43dBm Gain 13dB GaN

SKU: NPT1012B

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R 4,820.11

R 4,514.75

R 4,420.50

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GaN FETs DC-4.0GHz P1dB 43dBm Gain 13dB GaN

Products specifications

Transistor Type	HEMT
Product Type	RF JFET Transistors
Gain	13 dB
Packaging	Tray
Vgs - Gate-Source Breakdown Voltage	3 V
Id - Continuous Drain Current	4 mA
Maximum Operating Temperature	+ 200 C
Technology	GaN Si
Pd - Power Dissipation	44 W
Mounting Style	Screw Mount
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V

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Products specifications

Transistor Type	HEMT
Product Type	RF JFET Transistors
Gain	13 dB
Packaging	Tray
Vgs - Gate-Source Breakdown Voltage	3 V
Id - Continuous Drain Current	4 mA
Maximum Operating Temperature	+ 200 C
Technology	GaN Si
Pd - Power Dissipation	44 W
Mounting Style	Screw Mount
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V