MAPRST0912-350

RF Bipolar Transistors 960-1215MHz 350W Gain: 9.4dB min

SKU: MAPRST0912-350

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Quantity

20+

Price

R 17,375.83

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RF Bipolar Transistors 960-1215MHz 350W Gain: 9.4dB min

Products specifications

Technology	Si
Packaging	Tray
Continuous Collector Current	32.5 A
Configuration	Single
Transistor Polarity	NPN
Maximum Operating Temperature	+ 200 C
Product Type	RF Bipolar Transistors
Emitter- Base Voltage VEBO	3 V
Transistor Type	Bipolar Power
Collector- Emitter Voltage VCEO Max	65 V

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Products specifications

Technology	Si
Packaging	Tray
Continuous Collector Current	32.5 A
Configuration	Single
Transistor Polarity	NPN
Maximum Operating Temperature	+ 200 C
Product Type	RF Bipolar Transistors
Emitter- Base Voltage VEBO	3 V
Transistor Type	Bipolar Power
Collector- Emitter Voltage VCEO Max	65 V