RF JFET Transistors DC-4 GHz Gain 13.5dB GaN SiC
Products specifications
Output Power | 5 W |
Vds - Drain-Source Breakdown Voltage | 50 V |
Product Type | RF JFET Transistors |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 95 C |
Transistor Polarity | N-Channel |
Gain | 13.5 dB |
Id - Continuous Drain Current | 0.3 A |
Pd - Power Dissipation | 12 W |
Transistor Type | HEMT |
Packaging | Reel |
Technology | GaN SiC |