MOSFET NCH+NCH 4V DRIVE SERIES
Products specifications
Vgs - Gate-Source Voltage | 20 V |
Configuration | Dual |
Number of Channels | 2 Channel |
Id - Continuous Drain Current | 3 A |
Packaging | Reel |
Rds On - Drain-Source Resistance | 80 mOhms |
Transistor Polarity | N-Channel |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 10 nC |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 60 V |
Channel Mode | Enhancement |
Pd - Power Dissipation | 900 mW |