MOSFET MI SOT23 12V LOAD DRVR
Products specifications
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 800 mV |
Pd - Power Dissipation | 225 mW |
Vds - Drain-Source Breakdown Voltage | 16 V |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 900 mOhms |
Channel Mode | Enhancement |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |
Maximum Operating Temperature | + 85 C |
Vgs - Gate-Source Voltage | 6 V |
Minimum Operating Temperature | - 40 C |
Id - Continuous Drain Current | 500 mA |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |