IGBT Modules PIM 1200V 40A DU BST SiC DIODE
Lead Time: 0 Days
Products specifications
Minimum Operating Temperature | - 40 C |
Configuration | Dual |
Maximum Operating Temperature | + 125 C |
Collector-Emitter Saturation Voltage | 2.2 V |
Pd - Power Dissipation | 103 W |
Continuous Collector Current at 25 C | 40 A |
Technology | SiC |
Product | IGBT Silicon Carbide Modules |
Packaging | Tray |
Gate-Emitter Leakage Current | 200 nA |
Collector- Emitter Voltage VCEO Max | 1200 V |