IGBT Modules PIM 1200V 160A SPLIT TNP IGBT
Products specifications
Product | IGBT Silicon Modules |
Technology | Si |
Configuration | Split-T |
Continuous Collector Current at 25 C | 100 A, 160 A |
Packaging | Tray |
Pd - Power Dissipation | 500 W |
Collector-Emitter Saturation Voltage | 1.47 V, 2.15 V |
Collector- Emitter Voltage VCEO Max | 600 V, 1200 V |
Maximum Operating Temperature | + 125 C |
Minimum Operating Temperature | - 40 C |
Gate-Emitter Leakage Current | 300 nA, 500 nA |