MOSFET NFET 60V 115MA 7.5O
Products specifications
Vgs th - Gate-Source Threshold Voltage | 1 V |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 60 V |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 300 mW |
Id - Continuous Drain Current | 75 mA |
Qualification | AEC-Q101 |
Rds On - Drain-Source Resistance | 7.5 Ohms |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |