MOSFET PCH 4V DRIVE SERIES
Products specifications
Vgs - Gate-Source Voltage | 20 V |
Configuration | Single |
Transistor Polarity | P-Channel |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 80 nC |
Id - Continuous Drain Current | 38 A |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 60 V |
Pd - Power Dissipation | 65 W |
Rds On - Drain-Source Resistance | 29.5 mOhms |