1HN04CH-TL-W

MOSFETs NCH 120MA 100V SOT23
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SKU: 1HN04CH-TL-W

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MOSFETs NCH 120MA 100V SOT23
Lead Time: 0 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	6 Ohms
Number of Channels	1 Channel
Pd - Power Dissipation	600 mW
Channel Mode	Enhancement
Id - Continuous Drain Current	270 mA
Vgs th - Gate-Source Threshold Voltage	1.2 V
Transistor Polarity	N-Channel
Configuration	Single
Minimum Operating Temperature	- 55 C
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	900 pC

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Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	6 Ohms
Number of Channels	1 Channel
Pd - Power Dissipation	600 mW
Channel Mode	Enhancement
Id - Continuous Drain Current	270 mA
Vgs th - Gate-Source Threshold Voltage	1.2 V
Transistor Polarity	N-Channel
Configuration	Single
Minimum Operating Temperature	- 55 C
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	900 pC