Vgs - Gate-Source Voltage | 10 V |
Rds On - Drain-Source Resistance | 6.5 mOhms |
Qg - Gate Charge | 250 nC |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Mounting Style | Chassis Mount |
Packaging | Tube |
Configuration | Single |
Id - Continuous Drain Current | 190 A |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 568 W |