IRFD110PBF

MOSFETs HVMDIP 100V 1A N-CH MOSFET
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SKU: IRFD110PBF

Availability: 24593 in stock

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R 35.54

R 28.81

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R 15.67

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MOSFETs HVMDIP 100V 1A N-CH MOSFET
Lead Time: 0 Days

Products specifications

Packaging	Tube
Vds - Drain-Source Breakdown Voltage	100 V
Mounting Style	Through Hole
Qg - Gate Charge	8.3 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Configuration	Single
Technology	Si
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	1.3 W
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	1 A
Rds On - Drain-Source Resistance	540 mOhms
Channel Mode	Enhancement
Maximum Operating Temperature	+ 175 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Packaging	Tube
Vds - Drain-Source Breakdown Voltage	100 V
Mounting Style	Through Hole
Qg - Gate Charge	8.3 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Configuration	Single
Technology	Si
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	1.3 W
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	1 A
Rds On - Drain-Source Resistance	540 mOhms
Channel Mode	Enhancement
Maximum Operating Temperature	+ 175 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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