RF MOSFET Transistors RF Power
Lead Time: 33 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 30 V |
Gain | 15 dB |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 3 A |
Technology | Si |
Output Power | 8 W |
Minimum Operating Temperature | - 40 C |
Transistor Polarity | N-Channel |
Product Type | RF MOSFET Transistors |