RF Amplifier 978-1090 MHz, 250 W Peak, 50 V
Products specifications
Transistor Polarity | N-Channel |
Technology | Si |
Product Type | RF MOSFET Transistors |
Output Power | 250 W |
Gain | 32.1 dB |
Minimum Operating Temperature | - 40 C |
Vds - Drain-Source Breakdown Voltage | - 500 mV, 100 V |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 1.6 A |