A2V09H400-04NR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 107 W Avg., 48 V

SKU: A2V09H400-04NR3

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250+

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R 2,253.34

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 107 W Avg., 48 V

Products specifications

Product Type	RF MOSFET Transistors
Minimum Operating Temperature	- 40 C
Technology	Si
Id - Continuous Drain Current	2.1 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Output Power	107 W
Transistor Polarity	Dual N-Channel
Maximum Operating Temperature	+ 150 C
Gain	17.9 dB

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Products specifications

Product Type	RF MOSFET Transistors
Minimum Operating Temperature	- 40 C
Technology	Si
Id - Continuous Drain Current	2.1 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Output Power	107 W
Transistor Polarity	Dual N-Channel
Maximum Operating Temperature	+ 150 C
Gain	17.9 dB