RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 56 W Avg., 28 V
Products specifications
Product Type | RF MOSFET Transistors |
Vds - Drain-Source Breakdown Voltage | - 500 mV, 65 V |
Id - Continuous Drain Current | 3.2 A |
Technology | Si |
Minimum Operating Temperature | - 40 C |
Transistor Polarity | N-Channel |
Gain | 17.9 dB |
Output Power | 56 W |
Maximum Operating Temperature | + 125 C |