RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
Products specifications
Technology | Si |
Product Type | RF MOSFET Transistors |
Maximum Operating Temperature | + 150 C |
Output Power | 28 W |
Vds - Drain-Source Breakdown Voltage | - 500 mV, 65 V |
Minimum Operating Temperature | - 40 C |
Id - Continuous Drain Current | 600 mA, 1 A |
Gain | 17.9 dB |
Transistor Polarity | N-Channel |
Packaging | Reel |