MOSFETs 350mW, 60V, 340mA
Lead Time: 98 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 340 mA |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 30 nC |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Technology | Si |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Pd - Power Dissipation | 350 mW |
Vgs - Gate-Source Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 5.3 Ohms |