Phototransistors Photo Transistor
Products specifications
Product | Phototransistors |
Dark Current | 100 nA |
Collector- Emitter Voltage VCEO Max | 30 V |
Pd - Power Dissipation | 100 mW |
Minimum Operating Temperature | - 55 C |
Collector-Emitter Breakdown Voltage | 5 V |
Rise Time | 2.5 us |
Fall Time | 2.5 us |
Maximum Operating Temperature | + 125 C |