Phototransistors TO-18, NPN SILICON PHOTO TRANSISTOR
Products specifications
Dark Current | 100 nA |
Rise Time | 15 us |
Maximum Operating Temperature | + 125 C |
Product | Phototransistors |
Maximum On-State Collector Current | 8 mA |
Pd - Power Dissipation | 250 mW |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Fall Time | 15 us |
Collector-Emitter Saturation Voltage | 0.4 V |