Phototransistors TO-18, NPN Si Photo transistor
Products specifications
Maximum Operating Temperature | + 125 C |
Dark Current | 100 nA |
Collector-Emitter Saturation Voltage | 0.4 V |
Collector-Emitter Breakdown Voltage | 30 V |
Mounting Style | Through Hole |
Collector- Emitter Voltage VCEO Max | 5 V |
Minimum Operating Temperature | - 55 C |
Product | Phototransistors |
Pd - Power Dissipation | 250 mW |