Phototransistors Photo Transistor
Lead Time: 119 Days
Products specifications
Collector-Emitter Saturation Voltage | 0.4 V |
Minimum Operating Temperature | - 65 C |
Collector-Emitter Breakdown Voltage | 30 V |
Fall Time | 7 us |
Pd - Power Dissipation | 250 mW |
Rise Time | 7 us |
Product | Phototransistors |
Maximum On-State Collector Current | 3 mA |
Mounting Style | Through Hole |
Peak Wavelength | 890 nm |
Dark Current | 100 nA |
Maximum Operating Temperature | + 125 C |
Collector- Emitter Voltage VCEO Max | 30 V |